Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2008-08-12
2011-10-18
Tran, Long (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S061000, C257S064000, C257S072000, C257SE29117, C257SE29277, C257S029000
Reexamination Certificate
active
08039844
ABSTRACT:
This invention provides a top-gate microcrystalline thin film transistor and a method for manufacturing the same. An inversion layer channel is formed in a top interface of a microcrystalline active layer, and being separated from an incubation layer in a bottom interface of the microcrystalline active layer. The inversion layer channel is formed in the crystallized layer of the top interface of the microcrystalline active layer. As such, the present microcrystalline thin film transistor has better electrical performance and reliability.
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Kunal S. Girotra, JunHyung Souk, Kyuha Chung, Soonkwon Um, Shiyul Kim, Byoung-Jun. Kim, Sung-Hoon Yang, Beohmrock Choi, Joonchul Goh, Young-Rok Song, Yong-Mo Choi; “70.4 A 14.1 inch AMOLED Display using Highly Stable PECVD based Microcrystalline Silicon TFT Backplane”, 70.4/ K.S. Girotra p. 1972-1975.
Chen Bo-Chu
Huang Jung-Jie
Shih Ding-Kang
Tsai Cheng-Ju
Yeh Yung-Hui
Birch & Stewart Kolasch & Birch, LLP
Industrial Technology Research Institute
Tran Long
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