Microcrystalline semiconductor method and devices

Details Microcrystalline semiconductor method and devices Microcrystalline semiconductor method and devices

1983-05-11

1986-08-05

Edlow, Martin H.

357 30, 357 16, 357 61, H01L 4500

Patent

active

046046364

ABSTRACT:
The specification discloses a P-I-N device wherein a double heterojunction is provided by a body of intrinsic amorphous silicon sandwiched between two microcrystalline silicon layers.

REFERENCES:
patent: 4498092 (1985-02-01), Yamazaki

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