Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1996-05-24
1998-09-15
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 69, 257288, 257347, 257352, 257368, 257351, H01C 2976, H01C 27108, H01C 2362
Patent
active
058083162
ABSTRACT:
The disclosure relates to a microcrystal silicon thin film transistor; The transistor includes a substrate, a gate electrode formed on the substrate, an insulating film formed on the substrate, a non-doped microcrystal silicon film formed on the insulating film, and source and drain electrodes which are formed on the microcrystal film. In the transistor, there is provided an ohmic contact between the source and drain electrodes through the microcrystal silicon film. The insulating film optionally has an etched surface layer prepared by etching the insulating film which has been formed on the substrate, with an aqueous solution containing HF. The TFT can be produced in a simple manner with safety and with a simple equipment.
Chida Yoshihiko
Kondo Michio
Matsuda Akihisa
Abraham Fetsum
Agency of Industrial Science
Central Glass Company Limited
Crane Sara W.
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