Microcomponent having intra-layer electrical isolation with...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated...

Reexamination Certificate

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C257S622000, C257S623000

Reexamination Certificate

active

06879016

ABSTRACT:
A system and method is disclosed that strengthens the structural integrity of trench-fill electrical isolation techniques. One embodiment provides for etching a series of interlocking geometric trenches into a device layer and filling the trenches with a non-conductive dielectric material. The dielectric material establishes electrical isolation while the interlocking geometric trenches strengthen the structural integrity of the separation by providing at least one surface on the interlocking separation that experiences a compression force for each direction that the electrically isolated MEMS component is moved.

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Zhang, Dacheng et al., “A novel isolation technology in bulk micromachining using deep reactive ion etching and a polysilicon refill”, Journal of J. Micromech. Microeng. vol. 11 (2001—pp. 13-19.
Muller, Lilac et al., “Electrical Isolation Process for Molded, High-Aspect-Ratio Polysilicon Microstructures”, Dept. of Mechanical Engineering, Univeristy of California at Berkeley, 6 pages.
Ayazi, Farrokh, et al., Journal of J. Microelectromechanical Systems, vol. 9, No. 3, (Sep. 2000), pp. 288-294.
Forsberg, M., et al., “Shallow and Deep Trench Isolation for use in RF-Bioplar IC:s”, Applied Materials, 4 pages.

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