Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead
Reexamination Certificate
2006-12-19
2011-11-08
Williams, A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
C257S668000, C257S774000, C257S531000, C257S723000, C257S686000, C257S777000, C361S782000, C029S592100
Reexamination Certificate
active
08053890
ABSTRACT:
An assembly includes a substrate, a chip mounted on the substrate, a voltage controlled oscillator circuit including an inductor and further circuit elements. The inductor is mounted on or in the substrate, and the further circuit elements are mounted on or in the chip. An assembly is disclosed that includes a substrate including a first metallization plane and a second metallization plane, a chip mounted on the substrate, and an inductor mounted on or in the substrate. The inductor includes a first inductor portion in the first metallization plane and a second inductor portion in the second metallization plane. An assembly is also disclosed including a substrate, a chip mounted onto the substrate, and a transformer formed at least in part on or in the substrate.
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[Power Point Presentation], Zoschke et al., “Design and Fabrication of Integrated Passives in Thin Film Technology,” EMI Advanced Packaging Conference 2006, Tuesday Apr. 4, 2006, International Congress Center, Munich Germany.
Li Puma Giuseppe
Seippel Dietolf
Infineon - Technologies AG
Slater & Matsil L.L.P.
Williams A
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