Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1996-06-27
1999-10-05
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257 31, 257 32, 505190, 505238, 505329, H01L 2906, H01L 310256, H01L 3922
Patent
active
059628669
ABSTRACT:
A superconductor device has a substrate with an inclined surface that divides the substrate surface into a lower planar substrate surface and an upper planar substrate surface. A lower layer of an anisotropic superconductor material is epitaxially deposited on the lower planar substrate surface so that an a-axis of the anisotropic superconductor material of the lower layer is exposed at a top edge of the lower layer. An upper layer of an anisotropic superconductor material is epitaxially deposited on the upper planar substrate surface so that an a-axis of the anisotropic superconductor material of the upper layer is exposed at a top edge of the upper layer. A layer of a non-superconductor material overlies the inclined surface and the layers of anisotropic superconductor material.
REFERENCES:
patent: 4925829 (1990-05-01), Fujita et al.
C. B. Eom et al., "Epitaxial and Smooth Films of a-Axis YBa2Cu307", Science, vol. 249, pp. 1549-1552, Sep. 1990.
John Clark, "Advances in SQUID Magnetometers", IEEE Trans. Electron Devices, vol. ED-27, No. 10, Oct. 1980, pp. 1896-1908.
M.B. Ketchen, "DC SQUIDS 1980: The State of the Art", IEEE Trans. on Magnetics, vol. MAG-17, No. 1, Jan. 1981, pp. 387-394.
C.B. Eom et al., "Synthesis and properties of YBa.sub.2 Cu.sub.3 O.sub.7 thin films grown in situ by 90.degree. off-axis single magnetron sputtering," Physica C, 1990, pp. 354-382.
M.A. Beno et al., "Structure of the single-phase high-temperature superconductor YBa.sub.2 Cu.sub.3 O.sub.7-.delta. ", Appl. Phys. Lett, vol. 51(1), 1987, pp. 57-59.
C.B. Eom et al., "A-Axis-Oriented YBa.sub.2 Cu.sub.3 O.sub.7 /PrBa.sub.2 Cu.sub.3 O.sub.7 Superlattices", Science, vol. 251, 1991, pp. 780-783.
DiIorio Mark S.
Yang Kai-Yueh
Yoshizumi Shozo
Biomagnetic Technologies, Inc.
Garmong Gregory
Saadat Mahshid
Wilson Allan R.
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