Measuring and testing – Vibration – Sensing apparatus
Reexamination Certificate
1999-08-31
2001-07-03
Moller, Richard A. (Department: 2856)
Measuring and testing
Vibration
Sensing apparatus
Reexamination Certificate
active
06253621
ABSTRACT:
FIELD OF THE INVENTION
The present invention relates generally to semiconductor devices and their fabrication and, more particularly, to semiconductor devices and their manufacture involving analyzing the devices for defects.
BACKGROUND OF THE INVENTION
The semiconductor industry has recently experienced technological advances that have permitted dramatic increases in circuit density and complexity, and equally dramatic decreases in power consumption and package sizes. Present semiconductor technology now permits single-chip microprocessors with many millions of transistors operating at speeds of hundreds of millions of instructions per second to be packaged in relatively small, air-cooled semiconductor device packages. A by-product of such high-density and high functionality has been an increase in the number and complexity of the manufacturing processes, as well as an increase in the difficulties of maintaining satisfactory levels of quality control, analyzing the devices for defects, and providing a cost-effective product using such processes.
As the manufacturing processes for semiconductor devices and integrated circuits increase in difficulty, methods for testing and debugging these devices become increasingly important. Not only is it important to ensure that individual chips are functional, it is also important to ensure that batches of chips perform consistently. In addition, the ability to detect a defective manufacturing process early is helpful for reducing the number of defective devices manufactured, a cost avoidance methodology.
One type of defect that is prevalent in semiconductor device manufacture involves the generation of regions within metal structure of the device that lack sufficient metal, resulting in voids. Such voids are often created during canal (or trench) patterning, conductive film deposition, and canal and contact fill. The detection of voids is important because the circuit reliability depends upon having sufficient conductive material in these regions. One type of analysis that has been employed for defect detection is optical scanning. Optical scanning can be useful for analyzing patterns in the device. However, optical scanning is not as useful for analyzing shapes at the bottom of contacts and canals. In particular, when contact and canal fill includes opaque films like copper, metal below the films is not visible via optical scanning.
Some of the features of typical semiconductor device structures for which defect analysis is important include metal interconnects, devices, and other circuitry formed within the device. Many semiconductor devices now employ multiple circuit layers having multiple connections within each layer as well as between the layers. These additional layers hinder access to portions of the circuitry buried below or in between one or more of the layers. As the density of these layers and components increases, viewing and analyzing the structure for defects becomes more difficult, and in some cases, not possible. The difficulty, cost, and destructive aspects of existing methods for testing semiconductor devices for defects are impediments to the growth and improvement of semiconductor technologies.
SUMMARY OF THE INVENTION
The present invention is exemplified in a number of implementations and applications, some of which are summarized below. According to an example embodiment, the present invention is directed to a method for analyzing a semiconductor device having conductive structure. Acoustic energy is generated in the device, and a resulting acoustic wave is detected. An index of refraction of a portion of the conductive structure is calculated as a function of the wave, and used to detect at least one defect in the conductive structure. Using this method, semiconductor devices can be tested for defects in a relatively inexpensive and reliable manner.
According to another example embodiment of the present invention, a semiconductor device is manufactured. Conductive structure is formed within the device. Acoustic energy is generated in the device and a resulting acoustic wave is detected. An index of refraction of a portion of the conductive structure is calculated as a function of the wave and the existence of a defect in the device is determined. In response to detecting whether a defect exists in the device, the manufacture of the device is controlled.
The above summary of the present invention is not intended to describe each illustrated embodiment or every implementation of the present invention. The figures and detailed description which follow more particularly exemplify these embodiments.
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Advanced Micro Devices
Moller Richard A.
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