Micro-tip for emitting electric field and method for fabricating

Details Micro-tip for emitting electric field and method for fabricating Micro-tip for emitting electric field and method for fabricating

1996-07-23

1998-10-27

Robinson, Douglas W.

Semiconductor device manufacturing: process

Electron emitter manufacture

438105, H01L 2100, H01L 2102

Patent

active

058277528

ABSTRACT:
A micro-tip for emitting an electric field and a method for fabricating the same are disclosed. The method includes the steps of: forming a silicon mould; forming a functional layer on the silicon mould, and then forming a tip on the functional layer; forming a conductive thin film on one side of the tip; bonding a substrate to the conductive thin film; and removing the silicon mould, to thereby obtain the structural advantages of the semiconductor tip as well as the advantages of the material for functional layer, and realize the micro-tip for an emitting electric field having high reliability.

REFERENCES:
patent: 5628659 (1997-05-01), Xie et al.
Geis et al., "Diamond Cold Cathode", IEEE Electron Device Letters, 12:456-459 (Aug., 1991).
Xu et al., "Field-Dependence of the Area-Density of `Cold` Electron Emission Sites on Board-Area CVD Diamond Films", Electronics Letters, 29:1596-1597 (Sep. 2, 1993).
Okano et al., "Fabrication of a Miniature-Size Pyramidal-Shape Diamond Field Emitter Array", IEEE Electron Device Letters, 16:239-241 (Jun., 1995).
Holloway et al., "Production and Control of vacuum in field emission flat panel displays", Solid State Technology, pp. 47-54 (Aug., 1995).
Huang et al., "Silicon Wafer Bonding for Sealed Vacuum Microelectronic Devices", pp. 159-163.

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