Micro-structure manufacturing method

Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching

Reexamination Certificate

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C438S745000, C438S750000, C216S106000

Reexamination Certificate

active

07547642

ABSTRACT:
A method of manufacturing a micro-structure includes dry-etching a sacrificial layer provided to a silicon substrate to form structures the sacrificial layer reacting with etching gas to generate reaction products including H2O, wherein the dry-etching includes etching the sacrificial layer and removing H2O as one of the reaction products generated through the etching step of the sacrificial layer, wherein the etching and the removing of H2O are repetitively performed.

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Office Action dated Mar. 2, 2009 in corresponding Japanese patent application No. 2004-362480 (and English translation).

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