Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2005-12-08
2009-06-16
Vinh, Lan (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S745000, C438S750000, C216S106000
Reexamination Certificate
active
07547642
ABSTRACT:
A method of manufacturing a micro-structure includes dry-etching a sacrificial layer provided to a silicon substrate to form structures the sacrificial layer reacting with etching gas to generate reaction products including H2O, wherein the dry-etching includes etching the sacrificial layer and removing H2O as one of the reaction products generated through the etching step of the sacrificial layer, wherein the etching and the removing of H2O are repetitively performed.
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Office Action dated Mar. 2, 2009 in corresponding Japanese patent application No. 2004-362480 (and English translation).
DENSO CORPORATION
Posz Law Group , PLC
Vinh Lan
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