Micro-sensor

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices

Reexamination Certificate

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Reexamination Certificate

active

07427808

ABSTRACT:
The present invention describes a microsensor with a sensor element (2) and an integrated circuit (1), containing a semiconductor body (11) with an intergrated circuit (4), the sensor element (2) being positioned on a main surface (12) of the semiconductor body (11) and there being a eutectic connection (3) formed between the semiconductor body (11) and the sensor element (2).

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Initial Preliminary Examination Report (Translation) for Application PCT/EP2002/011256.
Wolffenbuttel R.F. “Low-temperature intermediate Au-Si wafer bonding; eutectic or silicide bond” Sensors and Actuators A, 62 (1997) pp. 680-686.
Wolffenbuttel R.F. “Low-temperature silicon wafer to wafer bonding using gold at eutectic temperature” Sensors and Actuators A, 43 (1994) pp. 223-229.
Schmidt M.A.: “Wafer to Wafer Bonding for Microstructure Formation” Proc of the IEEE, vol. 86, No. 8, Aug. 1998 pp. 1575-1585.

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