Micro photoreflectance semiconductor wafer analyzer

Details Micro photoreflectance semiconductor wafer analyzer Micro photoreflectance semiconductor wafer analyzer

1990-12-21

1994-11-15

Willis, Davis L.

Optics: measuring and testing

By dispersed light spectroscopy

Utilizing a spectrometer

356328, 356432, 356447, 356448, 356445, 25022723, G01J 328

Patent

active

053653343

ABSTRACT:
An apparatus for measuring local carrier concentration in a preselected area of a semi-conductor is shown and described. An exciting light (preferably a laser) alters the sample's band-gap by photo injecting electron hole pairs in the area being measured. Because of the Franz-Keldysh effect, the photo injected carriers alter the sample's reflectivity. An optical fiber conducts a broad band source of probing light to the excited area on the sample. The sample reflects some of the broad band light back into a fiber that conducts the reflected light to an optical analyzer. The optical analyzer includes a dispersive element that disperses the reflected light onto a linear array of detectors. The analyzer thus simultaneously samples multiple wavelengths in the reflected spectrum. From the resulting samples, a computer deconvolutes the spectral line shape into a measurement of the local electric field and the local carrier concentration.

REFERENCES:
patent: 4685801 (1987-08-01), Minekane
patent: 4710030 (1987-12-01), Tauc et al.
patent: 4776695 (1988-10-01), van Pham et al.
patent: 4790664 (1988-12-01), Saito et al.
patent: 4922309 (1990-05-01), Sekiwa et al.
"Novel Contactless electroreflectance spectroscopy of semiconductors" Appd Physics Letters, 56 (6), 5 Feb. 1990; Gal et al.

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