Micro-machine manufacturing process

Details Micro-machine manufacturing process Micro-machine manufacturing process

1995-06-09

1996-10-22

Breneman, R. Bruce

Etching a substrate: processes

Gas phase and nongaseous phase etching on the same substrate

216 76, 216 79, 216101, 1566511, H01L 21027

Patent

active

055673325

ABSTRACT:
A gaseous process for removing and vaporizing at least a portion of a silicon oxide film from between a substrate and a superstructure leaving a space between the substrate and the superstructure. The silicon oxide layer is removed in two steps. In the first step the bulk of the silicon oxide layer is removed by a rapid liquid or gaseous etching process, leaving at least a portion of the silicon oxide layer directly underlying the superstructure in place so as to support the superstructure during a wash cycle. In the second silicon oxide removal step the substrate is introduced to a high flow rate gaseous environment containing a relatively high concentration of anhydrous HF to which no, or only a relatively very low amount of, additional water vapor is provided until the silicon oxide directly underlying the superstructure has been removed.

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