Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Mesa or stacked emitter
Reexamination Certificate
2004-02-02
2009-10-06
Garber, Charles D. (Department: 2892)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Mesa or stacked emitter
C257SE21377
Reexamination Certificate
active
07598149
ABSTRACT:
An array of light emitting devices, each device comprising a sloped wall mesa (24) of luminescent semiconductor material. Extending over the sloped wall mesas (24) is a metal contact (30). The array can be arranged as a parallel addressable system so that all devices (24) can be stimulated to emit light simultaneously. Alternatively, the array can be arranged as a matrix addressable array, in which case individual devices can be selectively stimulated.
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International Search Report for PCT/GB2004/000360 completed Jul. 7, 2004.
Choi Hoi Wai
Dawson Martin David
Jeon Chan-Wook
Alston & Bird LLP
Garber Charles D.
Ullah Elias
University of Strathclyde
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