Electric lamp and discharge devices – Photosensitive – Secondary emitter type
Reexamination Certificate
2007-11-13
2007-11-13
Patel, Vip (Department: 2879)
Electric lamp and discharge devices
Photosensitive
Secondary emitter type
C313S1050CM
Reexamination Certificate
active
11032546
ABSTRACT:
This invention provides for a simple method of fabricating miniature electron multipliers, in an in-plane configuration suitable for use with miniature analytic instruments such as mass filters. The materials involved are predominantly silicon and compatible oxides, allowing the possibility of integration with a mass filter formed in a similar materials system. The materials are selected simultaneously to withstand high voltages and to enhance secondary electron emission. Fabrication is based on standard planar processing methods. These methods also allow the construction of an integrated set of bias resistors in a multi-electrode device, so that the device may be operated from a single high-voltage source.
REFERENCES:
patent: 4482836 (1984-11-01), Washington et al.
patent: 4990827 (1991-02-01), Ehrfeld et al.
patent: 5501893 (1996-03-01), Laermer et al.
patent: 5544772 (1996-08-01), Soave et al.
patent: 5568013 (1996-10-01), Then et al.
patent: 5618217 (1997-04-01), Then et al.
patent: 5997713 (1999-12-01), Beetz, Jr. et al.
patent: 6384519 (2002-05-01), Beetz, Jr. et al.
Bean K.E. “Anisotropic Etching Of Silicon,” IEEE Trans.on Electron Devices vol. ED-25, No. 10, pp. 1185-1193 (1978).
Fijol J.J., Then A.M., Tasker G.W., Soave R.J., “Secondary Electron Yield of SiO2and Si3N4Thin-Films For Continuous Dynode Electron Multipliers,” Appl. Surf. Sci. 48-49: pp. 464-471 (1991).
Beetz C.P., Lincoln B., Winn D.R., Segall K., Vasas M., Wall D. “Diamond Film Optical, X-Ray and Particle Detectors,” IEEE Trans.on Nucl. Sci. vol. 38, No. 2, pp. 107-109 (1991).
Ehrfeld W., Münchmeyer D., “Three-Dimensional Microfabrication Using Synchrotron Radiation,” Nucl. Instrum. & Meth. in Physics Research, vol. A303, pp. 523-532 (1991).
Shank S.M., Soave R.J., Then A.M., Tasker G.W., “Fabrication Of High Aspect Ratio Structures For Microchannel Plates,” J. Vac.Sci. Tech. vol. B13 (6), pp. 2736-2740, Nov./Dec. (1995).
Guckel H., “High-Aspect-Ratio Micromachining Via Deep X-Ray Lithography,” Proc. IEEE vol. 86, No. 8, pp. 1586-1593, Aug. (1998).
Hynes A.M., Ashraf H., Bhardwaj J.K., Hopkins J., Johnson I., Shepherd J.N., “Recent Advances In Silicon Etching For MEMS Using the ASE™ Process,” Sensors and Actuators vol. 74, pp. 13-17 (1999).
Fukuda D., Inoue M., Takahashi H., Nakazawa M., Kawarabayashi J., Hirata Y., Numazawa T., Haga T., “Development Of A Micro-Array-Type Electron Multiplier,” Nucl. Instrum. Meth. in Physics Research, vol. A436, pp. 196-200 (1999).
Inoue M., Fukuda D., Takahashi H., Nakazawa M., Kawarabayashi J., Hirata Y., Numazawa T., Haga T., “Development Of A New Position Sensitive Electron Multiplication Device Fabricated By LIGA Process,” Microsystems Technologies, vol. 6, pp. 90-93 (2000).
Beetz C.P., Boerstler R., Steinbeck J., Lemieux B., Winn D.R., “Silicon-Micromachined Microchannel Plates.” Nucl. Instrum. & Meth. in Physics Research, vol. A442, pp. 443-451 (2000).
Badman E.R., Cooks R.G., “Special Feature: Perspective -Miniature Mass Analyzers,” J.Mass. Spect. vol. 35, pp. 659-671 (2000).
Darling R.B., Scheidemann A.A., Bhat K.N., Chen T.C., “Micromachined Faraday Cup Array Using Deep Reaction Ion Etching,” Sensors and Actuators vol. A95, pp. 84-93 (2002).
McDermott Will & Emery LLP
Microsaic Systems Limited
Patel Vip
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