Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Temperature
Patent
1992-10-28
1995-04-11
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Temperature
257419, 257466, 257522, 257528, 257619, H01L 2358
Patent
active
054061091
ABSTRACT:
A miniature electronic element is provided formed of and within a single crystal of semiconductor material on which are formed top and bottom surface layers of an oxide of the semiconductor material, and including at least one isolated island of semiconductor material formed in the remaining material between the top and bottom surface layers. Contact members may be attached in predetermined spatial relation to at least one of the top and bottom surface layers and extend through the one surface to the island of material connecting thereto in spaced relation, whereby the material of the island between the contact members provides an electrical path of predetermined value between the contact members. An isolating chamber (or chambers) is formed between the surface layers around the isolated island of material to provide thermal isolation to the island of material. A temperature sensing device is described using such miniature electronic sensing element, by applying an electrical potential across the leads to produce predetermined heating of the island of material, whereby changes in ambient conditions around the sensing element will be reflected as resistance changes in the island of material. Also described are novel methods of making such miniature electronic elements, including novel ways to form islands of semiconductor material within a crystal thereof.
REFERENCES:
patent: 4533898 (1985-08-01), Sauermann
patent: 4706061 (1987-11-01), Johnson
patent: 4930347 (1990-06-01), Henderson
Thesis of Gregory N. Burton; Univ. of Cincinnati, Dec. 1981.
Thesis of Julie Ann Gordon Whitney; Oct. 1992.
Nauman Joseph G.
Wojciechowicz Edward
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