Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Temperature
Reexamination Certificate
2006-04-25
2006-04-25
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Temperature
C257S254000
Reexamination Certificate
active
07034375
ABSTRACT:
A Micro Electro-Mechanical Systems (MEMS) thermal switch. The switch includes a FET having a source and drain in a substrate and a beam isolated from the substrate. The beam is positioned over the source and the drain and spaced by a predefined gap. When the thermal set point is reached, the beam moves to electrically connect the source to the drain.
REFERENCES:
patent: 3896309 (1975-07-01), Halsor et al.
patent: 5463233 (1995-10-01), Norling
patent: 5796152 (1998-08-01), Carr et al.
patent: 2003/0034870 (2003-02-01), Becka et al.
Ionesca, A.M. et al., Modeling and Design of a Low-Voltage SOI Supended-Gate MOSFET (SG-MOSFET) with a Megal-Over-Gate Architecture, International Symposium on Quality Electronic Design, Mar. 18, 2002, pp. 496-501, Los Alamitos, CA.
Fritschi R. et al., A Novel RF MEMS Technological Platform, Annual Conference of the IEEE Industrial Electronics Society, Nov. 5, 2002, pp. 3052-3056, New York, NY.
Black Lowe & Graham PLLC
Honeywell International , Inc.
Wojciechowicz Edward
LandOfFree
Micro electromechanical systems thermal switch does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Micro electromechanical systems thermal switch, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Micro electromechanical systems thermal switch will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3621788