Micro-electro mechanical systems (MEMS) device using silicon...

Details Micro-electro mechanical systems (MEMS) device using silicon... Micro-electro mechanical systems (MEMS) device using silicon...

2006-07-04

2006-07-04

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

C438S051000

Reexamination Certificate

active

07071016

ABSTRACT:
An MEMS device using an SOI wafer includes a first silicon layer, an insulation layer formed on the first insulation layer, a second silicon layer formed an the insulation layer, a protective layer formed on the second silicon layer, and a ground hole extending from an upper portion of the protective layer to the first silicon layer and having a conductive material therein. A handle wafer in the MEMS device is connected to the ground hole without performing any additional wiring or bonding process.

REFERENCES:
patent: 2002/0060297 (2002-05-01), Konishi et al.

Affiliated with

Also associated with

Rating

Micro-electro mechanical systems (MEMS) device using silicon... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Micro-electro mechanical systems (MEMS) device using silicon..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Micro-electro mechanical systems (MEMS) device using silicon... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3559633