Micro defects in semi-conductors

Details Micro defects in semi-conductors Micro defects in semi-conductors

2006-09-26

2008-11-04

Connelly Cushwa, Michelle R (Department: 2874)

Optics: measuring and testing

By dispersed light spectroscopy

With sample excitation

C385S014000, C385S147000, C438S007000, C438S016000

Reexamination Certificate

active

07446868

ABSTRACT:
The invention relates to a method and apparatus for detecting defects in a semiconductor or silicon structure at room temperature, and in an efficient time, using photoluminescence. The invention employs the use of a high intensity beam of light preferably having a spot size between 0.1 mm 0.5 microns and a peak or average power density of 104-109w/cm2with a view to generating a high concentration of charge carriers, which charge characters detect defects in a semiconductor by interacting with same. These defects are visible by producing a photoluminescence image of the semiconductor. Several wavelengths may be selected to identify defects at a selective depth as well as confocal optics may be used.

REFERENCES:
patent: 4246793 (1981-01-01), Fairand et al.
patent: 4511800 (1985-04-01), Harbeke et al.
patent: 4740694 (1988-04-01), Nishimura et al.
patent: 4978862 (1990-12-01), Silva et al.
patent: 5202744 (1993-04-01), Louis
patent: 5539514 (1996-07-01), Shishido et al.
patent: 5659187 (1997-08-01), Legoues et al.
patent: 5995217 (1999-11-01), Watanabe
patent: 6075592 (2000-06-01), Banerjee et al.
patent: 6108079 (2000-08-01), Maeshima et al.
patent: 6160615 (2000-12-01), Matsui et al.
patent: 6214560 (2001-04-01), Yguerabide et al.
patent: 6256092 (2001-07-01), Tomita et al.
patent: 6429968 (2002-08-01), Carver
patent: 6462817 (2002-10-01), Strocchia-Rivera
patent: 6628111 (2003-09-01), Shapiro et al.
patent: 6893936 (2005-05-01), Chen et al.
patent: 6911347 (2005-06-01), Higgs
patent: 7113276 (2006-09-01), Higgs et al.
patent: 7139083 (2006-11-01), Fielden et al.
patent: 7245696 (2007-07-01), Yun et al.
patent: 7306951 (2007-12-01), Benson et al.
patent: 2002/0088952 (2002-07-01), Rao et al.
patent: 2002/0119485 (2002-08-01), Morgan
patent: 2003/0061212 (2003-03-01), Smith et al.
patent: 2003/0094579 (2003-05-01), Hasegawa et al.
patent: 2004/0092042 (2004-05-01), Higgs
patent: 2004/0106217 (2004-06-01), Higgs
patent: 2006/0262296 (2006-11-01), Higgs
patent: 2006/0281281 (2006-12-01), Tanzawa et al.
patent: 2007/0000434 (2007-01-01), Buczkowski
patent: 2007/0007466 (2007-01-01), Laurent et al.
patent: 2007/0008518 (2007-01-01), Hummel et al.
patent: 2007/0008526 (2007-01-01), Buczkowski
patent: 2007/0176119 (2007-08-01), Hummel
patent: 11-274257 (1999-10-01), None
patent: 11-354599 (1999-12-01), None
patent: 2000-193597 (2000-07-01), None
patent: 2003-045928 (2003-02-01), None
patent: WO-98/11425 (1998-03-01), None
patent: WO-02/29883 (2002-04-01), None
patent: WO-02/077621 (2002-10-01), None
patent: WO-2004/010121 (2004-01-01), None
patent: WO-2004/090516 (2004-10-01), None
patent: WO-2007/005438 (2007-01-01), None
patent: WO-2007/005438 (2007-01-01), None
patent: WO-2007/008311 (2007-01-01), None
patent: WO-2007/008399 (2007-01-01), None
patent: WO-2007/008399 (2007-01-01), None
patent: WO-2007/008430 (2007-01-01), None
patent: WO-2007/008430 (2007-01-01), None
Bajaj, J. et al. (Jun. 1, 1993). “Spatially resolved characterization of HGCDTE materials and devices by scanning laser microscopy,”Semiconductor Science and Technology8(6S):872-877.
Bellone, S. et al. (1991). “Recombination measurement of n-type heavily doped layer in high-low silicon junctions,”IEEE Trans. Electron. Devices38(3):532-537.
Commere, B. et al. (Sep. 1988), “Control of the fabrication steps of InP MIS transistors by means of scanning photoluminescence measurements,”Journal de Physique, Colloque, Paris, France 49(C-4)(Suppl. 9): 431-436.
Derbyshire, K. (Summer 2004). “The engineered substrate's balancing act: performance gains versus greater costs and increased yield risks,”Yield Management Solutions Magazinelocated at http://www.kla-tencor.com/company/magazine/summer04/coverstory.pdf, pp. 29.
DiStefano, T.H. et al. (Feb. 1987). “Non-destructive, non-contacting test of Si wafers by thermore-flectance,”IBM Technical Disclosure Bulletin, 10 pages.
Fitzgerald, E.A. et al. (Nov. 3, 1998). “Dislocations in relaxed SiGe/Si heterostructures,” MIT Department of Materials Science and Engineering and AmberWave Technologies, pp. 227-238.
Higgs, V et al. (Feb. 15, 1993). “Characterization of compositionally graed Sil-xGex alloy layers by photoluminescence spectroscopy and by cathodoluminescence spectroscopy and imaging,”Journal of Applied Physics73(4):152-156.
Higgs, V. (2000). Characterization of Si, SiGe, and SOI structures using photoluminescence,Materials Research Society Symposium Proceedings588:129-140.
Higgs, V. et al. (Sep. 13, 1999). “Application of room temperature photoluminescence for the characterization of impurities and defects in silicon,”Proceedings of SPIE3895:21-37.
Korsunska, N.E. et al. (Jul. 2004). “High temperature photoluminescence spectroscopy in p-type SiC,”Semiconductor Science and Technology19(7):833-838.
Miner, C.J. (1992). “Non-destructive, whole wafer assessment of optoelectronic epitaxial materials,”Semicond. Sci. Technol.7:A10-A15.
Montangero, P. et al. (May 1, 1994), “Optical-beam-induced current and photoluminescence techniques for localization of crystallographic defects in optoelectronic devices,”Materials Science and Engineering BB24(1/03):175-179.
Moore, C.J.L. et al. (Jun. 1990). “A spatially resolved spectrally resolved photoluminescence mapping system,”J. Crystal Growth103(1/4):21-27.
Pritchard, R.E. et al. (Jun. 1, 1993). “Composition assessment by spatially resolved photoluminescence of INGAAS and INGAASP epilayers grown on recessed INP substrates,”Semiconductor Science and Technology8(6):1166-1172.
Ressel, P. et al. (1993). “Optimized proton implantation step for vertical-cavity surface-emitting lasers,”Electron. Lett.29(10):918-919.
Ribes, A.C. et al. (May 1, 1995). “Photoluminescence imaging of porous silicon using a confocal scanning laser macroscope/microscope,”Applied Physics Letters66(18):2321-2323.
Tajima, M. (1990). “Characterization of semiconductors by photoluminescence mapping at room temperature,”Journal of Crystal Growth130:1-7.
Tajima, M. et al. (1990). “Mapping of microdefects in silicon crystals by photoluminescence at room temperature,”Semiconductor Silicon 1990fromProceedings of the Sixth International Symposium on Silicon Materials Science and Technology, eds. H. R. Huff et al., Electrochem. Soc., Inc.: Pennington, NJ, pp. 994-1004.
Titus, J. (Jun. 1, 2004). “Keep an eye on wafer defects,”Test&Measurement Worldlocated at http://www.reed-electronics.com/tmworld/article/CA420488.html, 5 pages.
Westrate, S. et al. (Feb. 2002). “Photoluminescence mapping detects CU contamination in SI wafers,”Solid State Technology45(2):57-58.
“RPM2000 Rapid Photoluminescence Mapper,” Sales Brochure, Date Unknown, 6 pages.
“SPHER: The key to revealing hidden problems in Siwafers,” Sales Brochure, Date Unknown, 8 pages.
Office Action mailed on Jan. 5, 2000 for U.S. Appl. No. 09/254,521, filed Mar 8, 1999 by Higgs et al., 6 pages.
Response to Office Action mailed on Sep. 19, 2005 for U.S. Appl. No. 09/254,521, filed Mar. 8, 1999 by Higgs et al., 14 pages.
Notice of Allowance mailed on May 18, 2006 for U.S. Appl. No. 09/254,521, filed Mar. 8, 1999 by Higgs et al., 14 pages.
Restriction Requirement mailed on Jun. 14, 2007 for U.S. Appl. No. 11/177,735, filed Jul. 8, 2005 by Buczkowski, 6 pages.
Response to Restriction Requirement mailed on Jul. 23, 2007 for U.S. Appl. No. 11/177,735, filed Jul. 8, 2005 by Buczkowski, 16 pages.
Office Action mailed on Sep. 12, 2007 for U.S. Appl. No. 11/177,735, filed Jul. 8, 2005 by Buczkowski, 42 pages.
Office Action mailed on Oct. 3, 2007 for U.S. Appl. No. 11/426,877, filed Jun. 27. 2006 by Hummel et al., 8 pages.
Response to Office Action mailed on Dec. 20, 2007 for U.S. Appl. No. 11/426,877, filed Jun. 27, 2006 by Hummmel et al., 10 pages.
Ex Parte Quayle Action mailed on Jun. 11, 2007 for U.S. Appl. No. 11/427,080, filed Jun. 28, 2006 by Laurent

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