Optics: measuring and testing – By dispersed light spectroscopy – With sample excitation
Reexamination Certificate
2006-09-26
2006-09-26
Pham, Hoa Q. (Department: 2877)
Optics: measuring and testing
By dispersed light spectroscopy
With sample excitation
C438S007000, C438S016000, C250S458100
Reexamination Certificate
active
07113276
ABSTRACT:
The invention relates to a method and apparatus for detecting defects in a semiconductor or silicon structure at room temperature, and in an efficient time, using photoluminescence. The invention employs the use of a high intensity beam of light preferably having a spot size between 0.1 mm–0.5 microns and a peak or average power density of 104–109w/cm2with a view to generating a high concentration of charge carriers, which charge characters detect defects in a semiconductor by interacting with same. These defects are visible by producing a photoluminescence image of the semiconductor. Several wavelengths may be selected to identify defects at a selective depth as well as confocal optics may be used.
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Chin Freddie Yun Heng
Higgs Victor
Mayes Ian Christopher
Sweeney Michael
ASTI Operating Company, Inc.
Perkins Coie LLP
Pham Hoa Q.
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