Micro-chimney and thermosiphon die-level cooling

Heat exchange – Structural installation – Heating and cooling

Reexamination Certificate

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C165S080200, C165S905000, C257SE23087

Reexamination Certificate

active

06988531

ABSTRACT:
A method and arrangement for dissipating heat from a localized area within a semiconductor die is presented. A semiconductor die is constructed and arranged to have at least one conduit portion therein. At least a portion of the conduit portion is proximate to the localized area. The conduit portion is at least partially filled with a heat-dissipating material. The conduit portion absorbs heat from the localized area and dissipates at least a portion of the heat away from the localized area. As such, thermal stress on the die is reduced, and total heat from the die is more readily dissipated.

REFERENCES:
patent: 5232047 (1993-08-01), Matthews
patent: 5349498 (1994-09-01), Tanzer et al.
patent: 5355942 (1994-10-01), Conte
patent: 6377457 (2002-04-01), Seshan et al.
patent: 6448509 (2002-09-01), Huemoeller
patent: 6503626 (2003-01-01), Norley et al.
patent: 6621701 (2003-09-01), Tamba et al.
patent: 6661659 (2003-12-01), Tamba et al.

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