Chemistry: electrical and wave energy – Processes and products – Electrostatic field or electrical discharge
Patent
1993-12-03
1996-01-09
Niebling, John
Chemistry: electrical and wave energy
Processes and products
Electrostatic field or electrical discharge
20412965, 20412975, 204130, 437170, 437247, C25F 312, C25F 330
Patent
active
054825989
ABSTRACT:
A micro channel element includes a semiconductor substrate and a channel. The micro channel element is produced as follows. A mask having an opening with a desired pattern is formed on a surface of the semiconductor substrate. The semiconductor substrate on which the mask is formed is dipped in a solution of hydrofluoric acid or a solution mixture of hydrofluoric acid and ethyl alcohol. A cathode is arranged near the surface of the substrate dipped in the solution. An anode is connected to the other surface of the semiconductor substrate. A porosity is imparted to a portion of the surface of the semiconductor substrate which corresponds to the opening of the mask by applying a voltage across the cathode and anode. A high-temperature treatment is performed for the semiconductor substrate removed from the solution to increase the pore size and extend the branches of pores of the porous portion on the surface of the semiconductor substrate, thereby forming the micro channel.
REFERENCES:
patent: 3397278 (1968-08-01), Pomerantz
patent: 3640806 (1972-02-01), Watanabe et al.
patent: 4092445 (1978-05-01), Tsuzuki et al.
patent: 5139624 (1992-08-01), Searson et al.
Isaka Kazuo
Miyazaki Takeshi
Yagi Takayuki
Canon Kabushiki Kaisha
Niebling John
Phasge Arun S,.
LandOfFree
Micro channel element and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Micro channel element and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Micro channel element and method of manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1300327