Micro beam probe semiconductor test interface

Details Micro beam probe semiconductor test interface Micro beam probe semiconductor test interface

1995-02-06

1996-09-17

Karlsen, Ernest F.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

29884, G01R 173, H01R 4300

Patent

active

055572146

ABSTRACT:
Apparatus is disclosed for interfacing a semiconductor test circuit and a semiconductor device under test, wherein the interface is a silicon structure test probe having conductor paths which extend along cantilevered parallelogram micro beams having contact bumps on the free ends of the beams arranged in a pattern which registers with a test pad pattern on the semiconductor device under test. The parallelogram beams provide test pad contact with substantially no scrubbing action. The silicon structure provides testing over wide environmental ranges because the test probe structure reacts to environmental conditions in the same way as the silicon semiconductor device under test. A method for fabricating the silicon structure test probe is disclosed which includes fabrication in the silicon structure of semiconductor circuit drivers and receivers for the conducting paths.

REFERENCES:
patent: 3446065 (1969-05-01), Wiesler et al.
patent: 3648169 (1972-03-01), Wiesler
patent: 3851249 (1974-11-01), Roch
patent: 4116523 (1978-09-01), Coberly et al.

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