Radiant energy – Electrically neutral molecular or atomic beam devices and...
Patent
1996-07-03
1997-12-02
Berman, Jack I.
Radiant energy
Electrically neutral molecular or atomic beam devices and...
25049221, H01J 37317
Patent
active
056939396
ABSTRACT:
This invention relates to a method and apparatus for the direct current acceleration of ions of all species to energies as high as a few million electron volts (MeV). This invention has particular relevance for the controlled doping of semiconductor materials and flat panel display units where MeV doping may be needed for the production of deep wells, isolation layers, the sub-circuit crystal damage that is useful for gettering unwanted impurity atoms and for the developments of etch pits. The apparatus disclosed uses an acceleration procedure that employs high velocity neutral beams of dopant atoms to deliver atoms to the high voltage terminal of a dc. accelerator where they are converted to positive polarity and accelerated in a manner similar to that of a single ended dc accelerator. The disclosed method permits of a compact apparatus that does not require the use of negative ions, as do tandem-based accelerators, or the large power consumption of rf linacs and radio frequency quadrupoles. Neutral injection makes possible a compact implanter geometry that can include electrostatic scanning of the ions for individual wafer implantation.
Key Words
Integrated circuits, flat panel, implantation, deep wells, tubs, MeV implantation, gettering, latchup, neutral beams, semiconductor doping, ion implantation.
REFERENCES:
patent: 4434131 (1984-02-01), Dagenhart et al.
patent: 5300891 (1994-04-01), Tokoro
patent: 5352899 (1994-10-01), Golovanivsky et al.
Nuclear Instruments and Methods in Physics Research B55 (1991) pp. 434-438; N.Tokoro, et al.; "The beam performance of the Genus G-1500 ion implanter" .
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