Metrology systems and methods for lithography processes

Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement

Reexamination Certificate

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C430S005000, C430S311000

Reexamination Certificate

active

08067135

ABSTRACT:
Metrology systems and methods for lithography processes are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes providing a mask having a plurality of corner rounding test patterns formed thereon. A first semiconductor device is provided, and a layer of photosensitive material of the first semiconductor device is patterned with a plurality of corner rounding test features using the mask and a lithography process. An amount of corner rounding of the lithography process is measured by analyzing the plurality of corner rounding test features relative to other of the plurality of corner rounding test features formed on the layer of photosensitive material of the semiconductor device. The lithography process or the mask is altered in response to the amount of corner rounding measured, and a second semiconductor device is provided. The second semiconductor device is affected using the altered lithography process or the altered mask.

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Schmidt, M., et al., “Critical Dimension Photomask Metrology Tool Requirements for 0.25 um and Future Microlithography,” Proceedings of SPIE: 16th Annual BACUS Symposium on Photomask Technology and Management, Dec. 27, 1996, pp. 208-218, vol. 2884, SPIE, Bellingham, WA.

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