Semiconductor device manufacturing: process – Having selenium or tellurium elemental semiconductor component
Reexamination Certificate
2011-07-26
2011-07-26
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Having selenium or tellurium elemental semiconductor component
C438S306000, C438S795000, C257SE21090, C257SE21333, C257SE21409
Reexamination Certificate
active
07985617
ABSTRACT:
Some embodiments include methods in which microwave radiation is used to activate dopant and/or increase crystallinity of semiconductor material during formation of a semiconductor construction. In some embodiments, the microwave radiation has a frequency of about 5.8 gigahertz, and a temperature of the semiconductor construction does not exceed about 500° C. during the exposure to the microwave radiation.
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Smythe John
Srinivasan Bhaskar
Zhang Ming
Ghyka Alexander G
Micro)n Technology, Inc.
Nikmanesh Seahvosh J
Wells St. John P.S.
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