Methods to prevent divot formation in shallow trench isolation a

Details Methods to prevent divot formation in shallow trench isolation a Methods to prevent divot formation in shallow trench isolation a

1996-11-05

1999-07-13

Fourson, George

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438696, 438697, H01L 2176

Patent

active

059239913

ABSTRACT:
A number of methods to prevent divot formation, and the resulting enhanced electric field associated therewith, are disclosed. In a first embodiment of the present invention, spacers having a low etch rate in hydrofluoric acid solution, and that can be etched selectively to silicon dioxide are used to protect the silicon nitride liner from forming the divot. In a second embodiment of the present invention, a silicon dioxide spacer is used prior to the etching of the trenches, to allow the formation of the divots above the level of the silicon wafer, where they are not problematic. In a third embodiment of the present invention, a multi layer polish stop is used to prevent the formation of the divot.

REFERENCES:
patent: 4755479 (1988-07-01), Miura
patent: 4942137 (1990-07-01), Sivan et al.
patent: 5118382 (1992-06-01), Cronin et al.
patent: 5229316 (1993-07-01), Lee et al.
patent: 5234852 (1993-08-01), Liou
patent: 5387539 (1995-02-01), Yang et al.
patent: 5447884 (1995-09-01), Fahey et al.
patent: 5459096 (1995-10-01), Venkatesan et al.
patent: 5472904 (1995-12-01), Figura et al.
patent: 5492858 (1996-02-01), Bose et al.
patent: 5494857 (1996-02-01), Cooperman et al.
patent: 5498565 (1996-03-01), Gocho et al.
patent: 5504033 (1996-04-01), Bajor et al.
patent: 5521422 (1996-05-01), Mandelman et al.
patent: 5733383 (1998-03-01), Fazan et al.
patent: 5736451 (1998-04-01), Gayet
Pierre C. Fazan and Viju K. Mathews, A Highly Manufacturable Trench Isolation Process for Deep Submicron DRAMs, Dec., 1993.

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