Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2007-12-14
2010-11-02
Picardat, Kevin M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S080000, C257S088000, C257S091000, C257S431000, C257S432000, C257S435000, C257SE23137, C257SE31127
Reexamination Certificate
active
07825424
ABSTRACT:
Methods to manufacture contaminant-gettering materials in the surface of EUV optics are described herein. An optical element is patterned and a contaminant-gettering material is formed on a surface of the optical element. In one embodiment, a photoresist is deposited on an optical coating on the optical element. Trenches are formed in the optical coating. The gettering agent is formed into the trenches over the photoresist. Next, the photoresist is removed from the optical coating to expose the gettering agent in the trenches. For another embodiment, patches of a nanotube forest having a gettering agent are formed in designated areas of an optical element. The gettering agent of the patches may be a plurality of carbon nanotubes. The optical coating is formed on a substrate between patches of the gettering agent.
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Billett Bruce H.
Bristol Robert L.
Au Bac H
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Picardat Kevin M
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