Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2009-05-07
2010-12-07
Lebentritt, Michael S (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE21576, C257SE21589, C257SE29183, C257SE29256, C257SE29312
Reexamination Certificate
active
07847401
ABSTRACT:
A method (100) of forming semiconductor structures (202) including high-temperature processing steps (step118), incorporates the use of a high-temperature nitride-oxide mask (220) over protected regions (214) of the device (202). The invention has application in many different embodiments, including but not limited to, the formation of recess, strained device regions (224).
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Bu Haowen
Chidambaram P R
Grider Douglas T
Khamankar Rajesh
Brady III Wade J.
Garner Jacqueline J.
Lebentritt Michael S
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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