Methods, systems and structures for forming semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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C257SE21576, C257SE21589, C257SE29183, C257SE29256, C257SE29312

Reexamination Certificate

active

07847401

ABSTRACT:
A method (100) of forming semiconductor structures (202) including high-temperature processing steps (step118), incorporates the use of a high-temperature nitride-oxide mask (220) over protected regions (214) of the device (202). The invention has application in many different embodiments, including but not limited to, the formation of recess, strained device regions (224).

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