Methods of use and formation of a lateral bipolar transistor...

Details Methods of use and formation of a lateral bipolar transistor... Methods of use and formation of a lateral bipolar transistor...

2010-10-26

2011-10-25

Weiss, Howard (Department: 2814)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C257SE21545

Reexamination Certificate

active

08043934

ABSTRACT:
A method for protecting a semiconductor circuit from electrostatic discharge is disclosed. An electrostatic discharge is received at a node. Current created by the electrostatic discharge is directed vertically into a semiconductor body, laterally through the semiconductor and beneath a trench isolation region so that the current flows in a direction parallel to an upper surface of the semiconductor body, and to a reference supply node. The reference supply node being formed in a conductive layer disposed over the upper surface of the semiconductor body.

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