Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-02-21
2006-02-21
Zarabian, Amir (Department: 2822)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S959000, C438S974000, C134S005000, C134S902000
Reexamination Certificate
active
07001845
ABSTRACT:
In one aspect, the invention includes a method of treating a surface of a substrate. A mixture which comprises at least a frozen first material and liquid second material is provided on the surface and moved relative to the substrate. In another aspect, the invention encompasses a method of treating a plurality of substrates. A treating member is provided proximate a first substrate, and an initial layer of frozen material is formed over a surface of the treating member. A surface of the first substrate is treated by moving at least one of the treating member and the first substrate relative to the other of the treating member and the first substrate. After the surface of the first substrate is treated, the initial layer of frozen material is removed from over the surface of the treating member. The treating member is then provided proximate another substrate, and the surface of the other substrate is treated by moving at least one of the treating member and the second substrate relative to the other of the treating member and the second substrate.
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Doan Trung Tri
Moore Scott E.
Micro)n Technology, Inc.
Novacek Christy L.
Wells St. John P.S.
Zarabian Amir
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