Methods of treating a silicon carbide substrate for improved...

Semiconductor device manufacturing: process – Having diamond semiconductor component

Reexamination Certificate

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C438S931000

Reexamination Certificate

active

07138291

ABSTRACT:
A method is disclosed for treating a silicon carbide substrate for improved epitaxial deposition thereon and for use as a precursor in the manufacture of devices such as light emitting diodes. The method includes the steps of implanting dopant atoms of a first conductivity type into the first surface of a conductive silicon carbide wafer having the same conductivity type as the implanting ions at one or more predetermined dopant concentrations and implant energies to form a dopant profile, annealing the implanted wafer, and growing an epitaxial layer on the implanted first surface of the wafer.

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