Organic compounds -- part of the class 532-570 series – Organic compounds – Heavy metal containing
Reexamination Certificate
2001-09-27
2002-07-16
Nazario-Gonzalez, Porfirio (Department: 1621)
Organic compounds -- part of the class 532-570 series
Organic compounds
Heavy metal containing
C556S021000, C556S028000, C556S137000, C427S248100
Reexamination Certificate
active
06420583
ABSTRACT:
FIELD OF THE INVENTION
This invention is related to a method of synthesizing organometallic materials. More specifically, this invention is directed to a method for synthesizing ruthenium and osmium compounds.
BACKGROUND OF THE INVENTION
Ruthenium (Ru), osmium (Os), and their oxides are materials under consideration for use as electrodes in future semiconductor devices (e.g. ferroelectric memory and logic chips). These materials possess attractive physical properties, such as low electrical resistance, high work functions, inter-layer chemical diffusion resistance, and thermal and oxidative stability. In addition, Ru, Os and their oxides produce thin films with lattice parameters and thermal expansion coefficients that make them compatible with many dielectric materials under consideration for future semiconductor devices.
Chemical vapor deposition (CVD) is a technique that is widely utilized in the fabrication of semiconductor devices to produce the layers of materials that make the devices. CVD chemical compounds (referred to as precursors) are transported in the vapor phase to or near a surface where they decompose by some means (e.g. thermal, chemical or plasma activation) to produce a solid film of a desired material composition. The use of CVD techniques to produce both ruthenium and ruthenium oxide thin films for semiconductor devices has been demonstrated in a number of publications. See, for example, WO 00/12766. Ruthenium and osmium compounds suitable for use as CVD precursors will be required if these materials are incorporated into commercial semiconductor devices using the CVD technique. Further, there have been promising reports of employing both cyclopentadienyl ruthenium (II) complexes and ruthenium (0) carbonyl complexes as CVD precursors. U.S. Pat. No. 6,114,557 discloses a synthetic route to the ruthenium (0) carbonyl complexes.
The preparation of compounds with the formula L
x
M(CO)
Y
[L=a neutral ligand, M=Ru or Os, x=1 to 4, and y=1 to 5] dates back to the late 1960's when their preparation was first described in the scientific literature. The general preparative route to these compounds involves the reaction of Ru
3
(CO)
12
with a ligand, in the presence of a solvent at reflux. The solvent of choice for these reactions was generally benzene. Reactions of Ru
3
(CO)
12
with dienes, thiols and phosphines occurred in the solvent benzene at reflux. See, Johnson et al., Nature, 1967, pp. 902-3. Preparation of (diene)Ru(CO)
3
complexes including C
6
H
8
Ru(CO)
3
and C
8
H
12
Ru(CO)
3
complexes were prepared from the reaction of Ru
3
(CO)
12
with 1,3-cyclohexadiene and 1,5-cyclooctadiene respectively, in refluxing benzene. See, Cowles, et al., Chem. Comm, 1969, p. 392.
A second route to [(diene)Ru(CO)
3
] compounds involves displacement reactions using C
8
H
12
Ru(CO)
3
as the starting material. As described above, this compound is prepared by refluxing in benzene a mixture of 1,5-cyclooctadiene and Ru
3
(CO)
12
. The C
8
H
12
Ru(CO)
3
is then reacted with another diene (for example C
6
H
8
) also in refluxing benzene, to produce the desired product. See, Burt et al., J.C.S. Dalton, 1975, pp. 731-6. Further, alkene ligands displaces C
8
H
12
to form (alkene)Ru(CO)
3
complexes, with high yields. See, Domingos, et al., J.C.S. Dalton, 1975, pp. 2288-91.
Finally, U.S. Pat. No. 6,114,557 discloses an improved route to compounds with the formula L
x
M(CO)
Y
[L=a neutral ligand, M=Ru or Os, x=1 to 4, and y=1 to 5]. The reaction route they utilize is nearly identical to that described above, except that the solvent system is slightly modified. Thus, Ru
3
(CO)
12
is reacted with a ligand, in a solvent other than benzene. Specifically higher boiling solvents (for example toluene) are employed. The '557 patent discloses that a higher boiling solvent system leads to an increased reaction rate and increased product yield.
Although there is a great deal of prior art in the scientific chemical literature disclosing information about compounds of the type L
x
M(CO)
Y
[L=a neutral ligand, M=Ru or Os, x=1 to 4, and y=1 to 5], it is believed that the synthetic schemes discussed above describes their synthesis.
While prior art solutions employ a non-reactive solvent system for the synthesis of compounds of the type L
x
M(CO)
Y
[L=a neutral ligand, M=Ru or Os, x=1 to 4, and y=1 to 5], there has been no teaching or suggestion for a neat, or solvent-free, reaction route. In addition, the prior art references show that the synthesis of carbonyl-based complexes, i.e., ruthenium complexes, to require a long reaction time. For example, in U.S. Pat. No. 6,114,557, a reaction which produces (C
6
H
8
)Ru(CO)
3
is reported to take place over a 24 hour time period. Therefore, it is desirous to have a novel neat synthesis approach (where the ligand, L, acts as both the solvent and as a reactant) that is not taught or suggested by the prior art. The neat reaction route enables the reaction to be accomplished more quickly than by using prior art methods, while still producing the desired product in high yield. Using a neat reaction system is also preferable because it simplifies the synthetic process, since fewer components are needed.
SUMMARY OF THE INVENTION
This invention is directed to a method for synthesizing a carbonyl-substituted compound under neat conditions comprising refluxing a metal carbonyl compound with an excess of neutral ligand to produce a first mixture; evaporating any excess neutral ligand from the first mixture to produce a second mixture; and distilling the second mixture to produce the carbonyl based compound. The metal carbonyl is a ruthenium or osmium carbonyl complex. The neutral ligand may be phosphines, phosphites, amines, arsines, stibenes, ethers, sulfides, alkylidenes, nitrites, isonitriles, thiocarbonyls, linear, branched, or cyclic monoalkenes, linear, branched, or cyclic dienes, linear, branched, or cyclic trienes, bicyclic alkenes, bicyclic dienes, bicyclic trienes, tricyclic alkenes, tricyclic dienes, tricyclic trienes, and alkynes.
This invention is also directed to a method for synthesizing a carbonyl-based compound having the formula L
x
M(CO)
y
, wherein L=a neutral ligand, x=1-4, M=Ru or Os and y=1-5, under neat conditions comprising refluxing a metal carbonyl compound with the formula M
n
(CO)
z
, where M=Ru or Os, n=3, z=12, with an excess of neutral ligand to produce a first mixture; evaporating any excess neutral ligand from the first mixture to produce a second mixture; and distillation of the second mixture to produce the carbonyl based compound. The carbonyl is based on the formula L
x
M(CO)
y
, wherein L is a neutral ligand, x=1, M=Ru or Os and y=3.
This invention is also directed to synthesizing a carbonyl-based compound under neat conditions comprising refluxing a metal carbonyl compound with an excess of neutral ligand to produce a first mixture and distilling any excess neutral ligand from the first mixture to produce a second mixture; and distilling the second mixture to produce the carbonyl-based compound.
Furthermore, this invention provides a method for synthesizing a ruthenium complex under neat conditions refluxing a metal carbonyl compound with the formula M
n
(CO)
z
, where M=Ru, n=3, z=12, with an excess of neutral ligand to produce a first mixture; evaporating any excess neutral ligand from the first mixture to produce a second mixture; and distilling the second mixture to produce the carbonyl-based compound. Here, the ruthenium based complex comprises the formula L
x
M(CO)
y
, wherein L=C
6
H
8
, x=1, M=Ru and y=3.
This invention is also directed to a method for synthesizing an osmium complex under neat conditions to reflux a metal carbonyl compound with the formula M
n
(CO)
z
, where M=Os, n=3, z=12, with an
Hoover Cynthia A.
Lienhard Michael Alexander
Lau Bernard
Nazario-Gonzalez Porfirio
Praxair Technology, INC
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