Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1995-01-27
1996-12-24
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117104, 117105, 117929, C30B 2904
Patent
active
055870139
ABSTRACT:
A flat free-standing diamond film is produced by growing alternately at least one pair of a potential-concave diamond layer and a potential-convex diamond layer on a non-diamond substrate and eliminating the substrate. The potential-concave films are made by a CVD method under a condition (b), which is characterized by of a substrate temperature of 880.degree. C. to 950.degree. C. and a hydrocarbon ratio of 2.5 vol % to 3.5 vol %. The potential-convex films are made by a CVD method under the condition (a) which is charcterized by of a substrate temperature of 800.degree. C. to 850.degree. C. and a hydrocarbon ratio of 0.5 vol % to 1.5 vol %. The condition (a) can make a potential-convex film of a good crystal quality in spite of a slow deposition speed. It is preferable to employ an assembly of thinner potential-convex films and thicker potential-concave films to curtail the total time of synthesis. A multilayered diamond film with an arbitrary curvature can be produced by selecting the production conditions (a) and (b), and the thicknesses of the potential-convex layers and the potential-concave layers.
The diamond films still fixed on the substrate can be polished by an ordinary polishing apparatus, since the film is flat. A polished flat diamond film can be obtained by eliminating the substrate.
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Guo et al, "Strain in CVD Diamond Films: Effects of Deposition Variables", Thin Solid Films, Applied Diamond Conference, vol. 212, No. 1-2, ISSN 0040-6090 pp. 173-179.
Windischmann et al., "Free-Standing Diamond Membranes: Optical, Morphological and Mechanical Properties", Diamond and Related Materials, vol. 1, No. 5/6, Apr. 15, 1992, pp. 656-664.
Fujimori Naoji
Ikegaya Akihiko
Tanabe Keiichiro
Kunemund Robert
Sumitomo Electric Industries Ltd.
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