Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2011-07-05
2011-07-05
Sarkar, Asok K (Department: 2891)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C257SE21088, C257SE21567, C257SE21568, C438S455000, C438S456000, C438S457000
Reexamination Certificate
active
07972938
ABSTRACT:
Methods of producing CdZnTe (CZT) layers for the epitaxial growth of HgCdTe thereon include implanting ions into a CZT substrate at a low temperature to form a damaged layer underneath a CZT surface layer, bonding a wafer to the CZT substrate about the CZT surface layer using a bonding material, and, annealing the CZT substrate for a time sufficient to facilitate the splitting of the CZT substrate at the damaged layer from the CZT surface layer.
REFERENCES:
patent: 4072782 (1978-02-01), Kramer et al.
patent: 5399206 (1995-03-01), de Lyon
patent: 5454885 (1995-10-01), Dudoff et al.
patent: 6168967 (2001-01-01), Hoffbauer et al.
patent: 6242324 (2001-06-01), Kub et al.
patent: 6562127 (2003-05-01), Kud et al.
patent: 7041178 (2006-05-01), Tong et al.
patent: 2008/0138611 (2008-06-01), Yasuzawa et al.
S. Stolyarova, N. Amir and Y. Nemirovsky , Rapid thermal processing of epitaxial II-VI heterostructures, Journal of Crystal Growth, vols. 198-199, Part 2, Mar. 1999, pp. 1157-1161.
Tony, Qin-Yi and Gosele, Ulrich M., Wafer Bonding and Layer Splitting for Microsystems; Advanced Materials, vol. II, No. 17, 1999, pp. 409-1425.
Bhattacharya Rabi S.
Xu Yongli
Dinsmore & Shohl LLP
Sarkar Asok K
UES, Inc.
LandOfFree
Methods of splitting CdZnTe layers from CdZnTe substrates... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods of splitting CdZnTe layers from CdZnTe substrates..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of splitting CdZnTe layers from CdZnTe substrates... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2718455