Methods of removing semiconductor film with energy beams

Details Methods of removing semiconductor film with energy beams Methods of removing semiconductor film with energy beams

1994-06-20

1996-12-03

Walberg, Teresa J.

Electric heating

Metal heating

By arc

21912176, 437173, 437 2, 437 4, 136244, B23K 2600

Patent

active

055804730

ABSTRACT:
A method of removing a prescribed portion of a semiconductor film or a metal film involves irradiating the prescribed portion to be removed with a first energy beam, and then with a second energy beam. The energy densities and beam widths of the first and second energy beams are each separately controlled or selected to avoid damaging an underlayer under the film and to reduce or avoid deformation of a periphery around the removed portion.

REFERENCES:
patent: 4650524 (1987-03-01), Kiyama et al.
patent: 4723062 (1988-02-01), Nishioka et al.
patent: 4877481 (1989-10-01), Fukuda et al.
patent: 4877939 (1989-10-01), Duley et al.
patent: 5235154 (1993-08-01), Economikos
Shaw, A. S. et al. "Two-pass laser Cutting." IBM Technical Disclosure Bulletin, vol. 16, No. 10 (Mar. 1974, p. 3237.

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