Methods of reducing proximity effects in lithographic processes

Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement

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G03F 900

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06120952&

ABSTRACT:
Methods of reducing proximity effects in lithographic processes wherein an integrated circuitry pattern is transferred from a mask onto a semiconductor substrate are described. In one embodiment, a desired spacing is defined between a main feature which is to reside on a mask and which is to be transferred onto the substrate, and an adjacent proximity effects-correcting feature. After the spacing definition, the dimensions of the main feature are adjusted relative to the proximity effects-correcting feature to achieve a desired transferred main feature dimension. In another embodiment, a desired spacing is defined between a main feature having an edge and an adjacent sub-resolution feature. The edge of the main feature is moved relative to the sub-resolution feature to achieve a desired transferred main feature dimension.

REFERENCES:
patent: 5242770 (1993-09-01), Chen et al.
patent: 5256505 (1993-10-01), Chen et al.
patent: 5340700 (1994-08-01), Chen et al.
patent: 5447810 (1995-09-01), Chen et al.
patent: 5587834 (1996-12-01), Noguchi
patent: 5663893 (1997-09-01), Wampler et al.
patent: 5698346 (1997-12-01), Sugawara
patent: 5707765 (1998-01-01), Chen
patent: 5795688 (1998-08-01), Burdorf et al.
patent: 5858591 (1999-01-01), Lin et al.
patent: 5958635 (1999-09-01), Reich et al.
patent: 5972541 (1999-10-01), Sugasawara et al.
Jedrasik, P., "Neural Networks Applicatio for OPC (Optical Proximity Correction) in Mask Making", Microelectronic Engineering, Conference Title: Microelectron. Eng. (Netherlands), vol. 30, No. 1-4, 1996, p. 161-4.
Jedraski, P., "Neural Networks Applicatio for OPC (Optical Proximity Correction) in Mask Making", Microelectronic Engineering, vol. 30, No. 1-4, 1996, p. 161-4.
Phase-Shifting Structures for Isolated Features, J.G. Garofalo, R.L. Kostelak and T.S. Yang, SPIE vol. 1463 Optical/Laser Microlithography IV (1991), pp. 151-166.
0.3-micron optical lithography using a phase-shifting mask, Tsuneo Terasawa, Norio Hasegawa, Toshiei Kurosaka and Toshihiko Tanaka, SPIE vol. 1088 Optical/Laser Microlithography II (1989), pp. 25-33.

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