Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Reexamination Certificate
2007-08-14
2007-08-14
Lorengo, J. A. (Department: 1755)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
C106S400000, C427S249150, C427S255700
Reexamination Certificate
active
10504412
ABSTRACT:
A product produced in a PVD method is described, which consists of thin plane-parallel structures having a thickness in the range from 20 to 2000 nm and small dimensions in the range below one mm. Production is carried out by condensation of silicon suboxide onto a carrier passing by way of the vaporisers. The carrier is pre-coated, before condensation of the silicon suboxide, with a soluble, inorganic or organic separating agent in a PVD method. All steps, including that of detaching the product by dissolution, can be carried out continuously and simultaneously at different locations. As final step, the SiOymay be oxidised to SiO2in an oxygen-containing gas at atmospheric pressure and temperatures of more than 200° C. or SiOymay be converted to SiC at the surface of the plane-parallel structures in a carbon-containing gas at from 500° C. to 1500° C. The products produced in that manner are distinguished by high uniformity of thickness.
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Bujard Patrice
Hainz Rüdiger
Weinert Hilmar
Ciba Specialty Chemicals Corporation
Lorengo J. A.
Parvini Pegah
Suhadolnik Joseph C.
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