Methods of producing gallium phosphide yellow light emitting dio

Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal

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156612, 156613, 148187, 252 623GA, 357 17, 357 63, 357 89, 357 90, H01L 21205, H01L 3300

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039649407

ABSTRACT:
A method of producing a gallium phosphide yellow light emitting diode which includes the steps of providing a single crystal gallium phosphide substrate; growing from a hydride vapour phase a single crystal layer of nitrogen doped gallium phosphide of the same conductivity type as the substrate on a surface of the substrate such that the nitrogen content of the layer is greater than 10.sup.19 atoms/cc, the actually nitrogen content determining the wavelength of the light that can be emitted; forming at least one p-n junction with the nitrogen doped gallium phosphide layer; and forming an electrically conductive contact on each side of the p-n junction.

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Tietjen et al., "Preparation . . GaAs.sub.1.sub.-x P.sub.x Using Arsine and Phosphine," J. Electrochem. Soc., vol. 113, No. 7, July 1966, pp. 724-728.
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