Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1974-06-27
1976-06-22
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
156612, 156613, 148187, 252 623GA, 357 17, 357 63, 357 89, 357 90, H01L 21205, H01L 3300
Patent
active
039649407
ABSTRACT:
A method of producing a gallium phosphide yellow light emitting diode which includes the steps of providing a single crystal gallium phosphide substrate; growing from a hydride vapour phase a single crystal layer of nitrogen doped gallium phosphide of the same conductivity type as the substrate on a surface of the substrate such that the nitrogen content of the layer is greater than 10.sup.19 atoms/cc, the actually nitrogen content determining the wavelength of the light that can be emitted; forming at least one p-n junction with the nitrogen doped gallium phosphide layer; and forming an electrically conductive contact on each side of the p-n junction.
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Thomas et al., "Isoelectronic . . . Nitrogen in Gallium Phosphide," Physical Rev., vol. 150, No. 2, Oct. 14, 1966, pp. 680-689.
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Hart Peter Brian
Nicklin Ralph
Plessey Handel und Investments A.G.
Rutledge L. Dewayne
Saba W. G.
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