Methods of producing a semiconductor device and a semiconductor

Details Methods of producing a semiconductor device and a semiconductor Methods of producing a semiconductor device and a semiconductor

1975-02-14

1976-07-20

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 357 50, H01L 2122

Patent

active

039704866

ABSTRACT:
A method of making a semiconductor device is described in which a selected surface portion of a silicon wafer is masked against oxidation, and then the surface is oxidized to grow a thermal oxide which sinks into the silicon surface at the unmasked areas, with the result that the masked silicon remains as a mesa surrounded by the sunken oxide. Then semiconductor devices can be provided by various techniques in the silicon mesa. The advantages include the provision of flat junctions, as distinguished from dish junctions in the prior art, reduced capacitance resulting from the extension of the device interconnections over the silicon wafer, and a flatter surface on top of the wafer reducing the risk of damage to the deposited interconnections.

REFERENCES:
patent: 2981877 (1961-04-01), Noyce
patent: 3165430 (1965-01-01), Hugle
patent: 3279963 (1966-10-01), Castrucci et al.
patent: 3442011 (1969-05-01), Streiter
patent: 3445303 (1969-05-01), Engbert
patent: 3479237 (1969-11-01), Bergh et al.
patent: 3484313 (1969-12-01), Tauchi et al.
patent: 3550292 (1970-12-01), Irie et al.
patent: 3649386 (1972-03-01), Murphy
patent: R28653 (1975-12-01), Murphy
Silicon Nitride, A New Diffusion Mask, Doo, IEEE Transactions on Electron Devices, vol. 13, No. 7, pp. 561-563, July 1966.

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