Methods of processing semiconductor wafers having silicon...

Details Methods of processing semiconductor wafers having silicon... Methods of processing semiconductor wafers having silicon...

2006-09-14

2009-06-16

Monbleau, Davienne (Department: 2893)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Making plural separate devices

C438S602000, C438S666000, C438S931000

Reexamination Certificate

active

07547578

ABSTRACT:
Methods of forming a silicon carbide semiconductor device are disclosed. The methods include forming a semiconductor device at a first surface of a silicon carbide substrate having a first thickness, and mounting a carrier substrate to the first surface of the silicon carbide substrate. The carrier substrate provides mechanical support to the silicon carbide substrate. The methods further include thinning the silicon carbide substrate to a thickness less the first thickness, forming a metal layer on the thinned silicon carbide substrate opposite the first surface of the silicon carbide substrate, and locally annealing the metal layer to form an ohmic contact on the thinned silicon carbide substrate opposite the first surface of the silicon carbide substrate. The silicon carbide substrate is singulated to provide a singulated semiconductor device.

REFERENCES:
patent: 5851664 (1998-12-01), Bennett et al.
patent: 6884644 (2005-04-01), Slater
patent: 7367875 (2008-05-01), Slutz et al.
patent: 2002/0179910 (2002-12-01), Slater
patent: 2004/0147120 (2004-07-01), Rogalli et al.
patent: 2005/0104072 (2005-05-01), Slater et al.
patent: 2005/0151138 (2005-07-01), Slater
patent: 2006/0060877 (2006-03-01), Edmond
patent: 2006/0060879 (2006-03-01), Edmond
patent: 2006/0186418 (2006-08-01), Edmond
patent: WO 01/86727 (2001-11-01), None
Soloviev et al. (2000) “Doping of 6H-SiC by selective diffusion of boron”Applied Physics Letters77(24): 4004-4006.
International Search Report and Written Opinion for International Application No. PCT/US2006/035516, mailed Feb. 14, 2007.

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