Methods of processing of gallium nitride

Details Methods of processing of gallium nitride Methods of processing of gallium nitride

2006-03-21

2006-03-21

Schillinger, Laura M. (Department: 2813)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S455000, C438S492000

Reexamination Certificate

active

07015117

ABSTRACT:
A method for improving thermal dissipation in large gallium nitride light emitting diodes includes replacing sapphire with a better thermal conductor resulting in more efficient removal of thermal energy. A method for achieving a reliable and strong temporary bond between a GaN epitaxial layer and a support wafer. A method for transferring an epitaxial film from a growth substrate to a secondary substrate. An excimer laser initiates film delamination from the growth substrate. The laser beam is shaped by a shadow mask and aligned to an existing pattern in the growth substrate. A method for fabricating a LED that radiates white spectrum light. A phosphor that radiates a white spectrum after excitation in the blue or UV spectrum onto the GaN epitaxial wafer prior to die separation and packaging. A method for depositing a metal substrate onto a GaN epitaxy layer.

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