Methods of planarization

Details Methods of planarization Methods of planarization

2006-05-09

2006-05-09

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S691000, C438S693000, C438S710000

Reexamination Certificate

active

07041600

ABSTRACT:
A method of planarization allows for the use of chemical mechanical polishing (CMP) in starting structures having films not generally suitable for CMP processes. Two material layers are formed over a starting structure, and the upper layer is planarized in a CMP process. A nonselective etch is then used to transfer the planar topography to the lower level.

REFERENCES:
patent: 6440638 (2002-08-01), Golz et al.
patent: 6683340 (2004-01-01), Kim et al.
patent: 6753249 (2004-06-01), Chen et al.
patent: 6841479 (2005-01-01), Cherian et al.
patent: 6852208 (2005-02-01), Ashjaee et al.

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