Methods of optical proximity correction

Details Methods of optical proximity correction Methods of optical proximity correction

2011-06-21

2011-06-21

Dinh, Paul (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Design of semiconductor mask or reticle

C716S051000, C716S052000, C716S053000, C716S054000

Reexamination Certificate

active

07966579

ABSTRACT:
Systems and methods of optical proximity correction are disclosed. A preferred embodiment comprises a method of determining optical proximity correction, which includes providing a design for a lithography mask. The design comprises a layout for a material layer of a semiconductor device. A predicted wafer image producible by the design for the lithography mask is calculated, and an amount of error between a target image and the calculated predicted wafer image is measured over a plurality of pixels of the predicted wafer image. The plurality of pixels comprises a plurality of different sizes.

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“Optical Proximity Correction,” Wikipeida, the free encyclopedia, http://en.wikipeida.org/wiki/Optical—proximity—correction, downloaded Jul. 13, 2006, 2 pp., Wikimedia Foundation, Inc., St. Petersburg, FL.
Wolf, S., et al., “Silicon Processing for the VLSI Era: vol. 1: Process Technology,” 2nd Ed., 2000, p. 628-630, Lattice Press, Sunset Beach, CA.

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