Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2011-07-26
2011-07-26
Dinh, Son T (Department: 2824)
Static information storage and retrieval
Floating gate
Particular connection
C365S185180, C365S185240
Reexamination Certificate
active
07986556
ABSTRACT:
Methods of operating non-volatile memory devices are described. The memory devices comprise memory cells having an n-type semiconductor substrate and p-type source and drain regions disposed below a surface of the substrate and separated by a channel region. A tunneling dielectric layer is disposed above the channel region. A charge storage layer is disposed above the tunneling dielectric layer. An upper insulating layer is disposed above the charge storage layer, and a gate is disposed above the upper insulating multi-layer structure. A positive bias is applied to a word line of the memory device in a selected memory cell and a negative bias is applied to a bit line in the selected cell. In another memory device, opposite polarity voltages are applied to the bit line and the word line.
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Dinh Son T
Haynes Beffel & Wolfeld LLP
Macronix International Co. Ltd.
Suzue Kenta
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