Methods of operating embedded flash memory devices

Details Methods of operating embedded flash memory devices Methods of operating embedded flash memory devices

2010-02-22

2011-10-04

Mai, Son (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180, C365S185280, C365S185290, C365S185330, C257S316000, C257S318000, C257SE29300

Reexamination Certificate

active

08031532

ABSTRACT:
Flash memory device structures and methods of manufacture thereof are disclosed. The flash memory devices are manufactured on silicon-on-insulator (SOI) substrates. Shallow trench isolation (STI) regions and the buried oxide layer of the SOI substrate are used to isolate adjacent devices from one another. The methods of manufacture require fewer lithography masks and may be implemented in stand-alone flash memory devices, embedded flash memory devices, and system on a chip (SoC) flash memory devices.

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