Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2005-04-26
2008-12-23
Tran, Binh X (Department: 1794)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C216S038000
Reexamination Certificate
active
07468322
ABSTRACT:
A method is provided for removing conductive material from a metal layer deposited on a wafer having die level thickness variations on its surface. The method includes contacting the metal layer with a composition capable of planarizing die level thickness variations while using a current having a current density within a range of between about 5 mA/cm2and about 40 mA/cm2, applying a first current to the wafer having a current density within a range of between about 5 mA/cm2and about 20 mA/cm2to remove a first portion of the metal layer to thereby planarize the wafer surface, and administering a second current to the wafer having a current density within a range of between about 20 mA/cm2and about 40 mA/cm2to remove a second portion of the metal layer and to leave a third portion of the metal layer on the wafer having a predetermined thickness.
REFERENCES:
patent: 6653226 (2003-11-01), Reid
patent: 6811680 (2004-11-01), Chen et al.
patent: 6858531 (2005-02-01), Zhu et al.
patent: 6951599 (2005-10-01), Yahalom et al.
patent: 7160432 (2007-01-01), Liu et al.
patent: 2004/0072445 (2004-04-01), Sun et al.
patent: 2004/0182721 (2004-09-01), Manens et al.
George Patricia A
Ingrassia Fisher & Lorenz P.C.
Novellus Systems Inc.
Tran Binh X
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