Methods of manufacturing semiconductor, semiconductor device and

Details Methods of manufacturing semiconductor, semiconductor device and Methods of manufacturing semiconductor, semiconductor device and

1998-06-15

2000-02-29

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438431, 438503, 257 76, 257 79, 117106, 117952, H01L 2120

Patent

active

060308494

ABSTRACT:
On an entire surface of a substrate of sapphire having a projection with a width in the lateral direction of approximately 10 .mu.m thereon, a first semiconductor layer of Al.sub.y Ga.sub.1-y N and a second semiconductor layer of In.sub.x Ga.sub.1-x N are successively grown by MOVPE. In this manner, an island-like stacked substance including the isolated first semiconductor layer and the isolated second semiconductor layer can be formed on the top surface of the projection of the substrate.

REFERENCES:
E.J. Thrush et al., "Selective and non-planar epitaxy of InP, GaInAs and GaInAsP using low pressure MOCVD", Journal of Crystal Growth 124, pp. 249-254 (no month given), 1992.
E.J. Thrush, et al., "Selective and non-planar epitaxy of InP, GaInAs and GaInAsP using low pressure MOCVD", Journal of Crystal Growth 124, pp. 249-254, 1992.
J. Finders, et al., "Composition of selectively grown In.sub.x Ga.sub.1-x As structures from locally resolved Raman spectroscopy", Journal of Crystal Growth 107, pp. 151-155, 1991.
S. Keller, et al., "Growth and characterization of bulk InGaN films and quantum wells", Appl. Phys. Lett., vol. 68, pp. 3147-3149, May 27, 1996.
S. Nakamura, "High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures", Jpn. J. Appl. Phys., vol. 34, Part 2, No. 7A, pp. L797-L799, Jul. 1, 1995.
A. Madhukar, "Growth of semiconductor heterostructures on patterned substrates: defect reduction and nanostructures", Proc. of Thin Solid Films, 231, pp. 8-42, 1993.
T. Tanaka, et al., "Selective growth of gallium nitride layers with a rectangular cross-sectional shape and stimulated emission from the optical waveguides observed by photopumping", Appl. Phys. Lett. 68 (7), pp. 976-978, Feb. 12, 1996.

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