Methods of manufacturing semiconductor devices

Details Methods of manufacturing semiconductor devices Methods of manufacturing semiconductor devices

2005-09-13

2005-09-13

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S435000, C438S437000, C438S700000, C438S735000, C438S736000, C438S739000, C438S743000, C438S744000, C438S757000, C438S787000

Reexamination Certificate

active

06943092

ABSTRACT:
Methods of manufacturing semiconductor devices are disclosed. In a disclosed example, a multi-layered insulating structure is deposited on a semiconductor substrate, an opening is formed in the multi-layered insulating structure above the semiconductor substrate, and a trench is formed in the semiconductor substrate under the opening. Then, a groove is formed on an edge position of an intermediate layer of the multi-layered insulating structure by wet-etching the intermediate layer of the multi-layered insulating layer transversely using a pull back process. Then, a liner oxide layer is deposited on the groove and the trench. An oxide layer then fills the trench and the groove without generating voids or divots in the oxide layer of the trench.

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