Metal treatment – Compositions – Heat treating
Patent
1984-04-26
1986-08-12
Hearn, Brian E.
Metal treatment
Compositions
Heat treating
148186, 148188, 148DIG15, 148DIG24, 148DIG125, 148DIG128, 29576B, 29576T, 29578, H01L 21324, H01L 2126
Patent
active
046054472
ABSTRACT:
A plasma and heating treatment is carried out to reduce the density of charge carrier traps adjacent the interface of an insulating layer of a thermally grown silicon dioxide and a semiconductor body. During this plasma and heating treatment, the device is covered with an additional layer of silicon containing hydrogen, such as silane, for example, and this additional layer protects the insulating layer from direct bombardment of the plasma. During and/or after the plasma treatment, heating of the structure is at about 400.degree. C. or less. After the plasma and heating treatment, the additional layer is removed from at least most parts of the semiconductor device structure.
REFERENCES:
patent: 4013485 (1977-03-01), Ma et al.
patent: 4224084 (1980-09-01), Pankove
patent: 4234355 (1980-11-01), Meinders
patent: 4266986 (1981-05-01), Benton et al.
patent: 4331486 (1982-05-01), Chenevas-Paule et al.
patent: 4331709 (1982-05-01), Risch et al.
patent: 4364779 (1982-12-01), Kamgar et al.
patent: 4371587 (1982-02-01), Peters
patent: 4447272 (1985-05-01), Saks
Danesh et al., "Hydrogen Passivation of the Implantation Defects in MOS Structures,", Radiation Effect Lett. vol. 86, 3/84.
Tarng et al., "Passivation of P-N Junctions in c-Si by Amorphous Silicon," IEEE Trans. Electr. Device vol. ED-26, No. 11, Nov. 79.
Kastl et al., "Ion Implantation Diffusion Source", IBM Tech. Discl. Bull. vol. 16, No. 4, Sep. 73.
Pankove et al., "Amorphous Si as a Passivant for Crystalline Si" Applied Phys. Lett. 34(2) Jan. 79.
Weitzel et al, "Preparation of Glow Discharge Amorphous Si for Passivation Layers", Thin Solid Films, 75 (1981) 143-150.
Brotherton Stanley D.
Gill Audrey
King Michael J.
Auyang Hunter L.
Hearn Brian E.
Miller Paul R.
U.S. Philips Corporation
LandOfFree
Methods of manufacturing semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Methods of manufacturing semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Methods of manufacturing semiconductor devices will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1934484