Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Thermally responsive
Reexamination Certificate
2007-04-19
2008-10-07
Jackson, Jerome (Department: 2815)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Thermally responsive
C257S467000, C257SE21004, C257SE21351, C338S0220SD
Reexamination Certificate
active
07432123
ABSTRACT:
A method of manufacturing high temperature thermistors. A polycrystalline thermistor body is formed from a material selected from a list consisting of bulk polycrystalline Si with intrinsic conductivity and bulk polycrystalline Ge with intrinsic conductivity. At least one ohmic contact is formed on at least one surface of the polycrystalline thermistor body.
REFERENCES:
patent: 3374404 (1968-03-01), Luecke
patent: 3568125 (1971-03-01), Villemant et al.
patent: 3629585 (1971-12-01), Desvignes et al.
patent: 3745506 (1973-07-01), Bethe
patent: 3881181 (1975-04-01), Khajezadeh
patent: 3936789 (1976-02-01), Matzen et al.
patent: 4009482 (1977-02-01), Nakata
patent: 4035757 (1977-07-01), Einthoven et al.
patent: 4047436 (1977-09-01), Bernard et al.
patent: 4063210 (1977-12-01), Collver
patent: 4276535 (1981-06-01), Mitsuyu et al.
patent: 4359372 (1982-11-01), Nagai et al.
patent: 4586829 (1986-05-01), Hübner et al.
patent: 4772866 (1988-09-01), Willens
patent: 5037766 (1991-08-01), Wang
patent: 5066938 (1991-11-01), Kobashi et al.
patent: 5081438 (1992-01-01), Nakahata et al.
patent: 5141334 (1992-08-01), Castles
patent: 5172211 (1992-12-01), Godinho et al.
patent: 5183530 (1993-02-01), Yamazaki
patent: 5446437 (1995-08-01), Bantien et al.
patent: 5924996 (1999-07-01), Cho et al.
patent: 5969238 (1999-10-01), Fischer
patent: 6023978 (2000-02-01), Dauenhauer et al.
patent: 6077228 (2000-06-01), Schonberger
patent: 6122704 (2000-09-01), Hass
patent: 6316770 (2001-11-01), Ouvrier-Buffet
patent: 6319429 (2001-11-01), Moos et al.
patent: 6354736 (2002-03-01), Cole et al.
patent: 6380840 (2002-04-01), Weinand et al.
patent: 6433666 (2002-08-01), Inoue et al.
patent: 6744346 (2004-06-01), Akram et al.
patent: 6863438 (2005-03-01), Pannek et al.
patent: 2002/0179992 (2002-12-01), Parson
patent: 2002/0190337 (2002-12-01), House et al.
Wolf, Stanley, et al, “Silicon Processing for the VLSI Era,” vol. 1, Second Edition, copyright 2000, Lattice Press, pp. 5-28.
Wolf, Stanley, et al, “Silicon Processing for the VLSI Era,” vol. 1, Second Edition, copyright 2000, Lattice Press, pp. 842-845.
U.S. Appl. No. 10/846,055, Office Action dated Aug. 18, 2006, 7 pages.
U.S. Appl. No. 10/846,055, Final Office Action dated Jan. 23, 2007, 11 pages
U.S. Appl. No. 10/846,055, Notice of Allowance dated Apr. 19, 2007, 7 pages.
U.S. Appl. No. 10/846,055, Notice of Allowance dated Sep. 13, 2007, 10 pages
U.S. Appl. No. 11/788,440, Office Action dated Dec. 13, 2007, 11 pages.
U.S. Appl. No. 11/788,440, Notice of Allowance dated Apr. 21, 2008, 8 pages.
U.S. Appl. No. 11/014,408, Office Action dated May 2, 2006, 7 pages.
U.S. Appl. No. 11/014,408, Office Action dated Oct. 18, 2005, 6 pages.
U.S. Appl. No. 11/014,408, Office Action dated Aug. 15, 2006, 12 pages.
U.S. Appl. No. 11/014,408, Notice of Allowance dated Jun. 8, 2007, 6 pages.
U.S. Appl. No. 11/014,408, Notice of Allowance dated Jan. 23, 2007, 5 pages.
AdSem, Inc.
Blakely , Sokoloff, Taylor & Zafman LLP
Budd Paul A
Jackson Jerome
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